Electron Bessel beam diffraction for precise and accurate nanoscale strain mapping

Darkfield electron holography for strain mapping at the nanoscale

We describe the application of the recent method of dark-field electron holography (DFEH) to the measurement of strain in nanostructures and devices. The holographic setup and experimental requirements will be briefly reviewed along with features of the software used to analysis the data. Examples will be given pertaining to strained-silicon transistors.

Accurate and precise lattice parameters by selected-area electron diffraction in the transmission electron microscope

Lattice parameters for gold nanocrystals, quartz, and vesuvianite have been determined by electron diffraction in routine transmission electron microscopy (TEM) work, with precision and accuracy near to 0.1%, after correction for elliptical distortion. The distortion, measured in three different microscopes, is constant for each microscope and may be easily eliminated. Variable camera constants...

Strain mapping at the nanoscale using precession electron diffraction in transmission electron microscope with off axis camera

Convergent beam electron diffraction

In convergent-beam electron diffraction (CBED) a highly convergent electron beam is focussed on to a small (~< 50 nm) area of the sample. Instead of the diffraction spots that are obtained in the back focal plane of the objective lens with parallel illumination in conventional selected-area electron diffraction, CBED produces discs of intensity. The point group can be determined uniquely from t...

Convergent beam electron diffraction

The development of new materials requires an understanding of their mode of growth and the nature of defects, interfaces and strains thereby incorporated. This paper shows how convergent beam electron diffraction (CBED) and large angle CBED (LACBED) can be used to analyse such problems. It is shown how CBED and LACBED can give two-beam rocking curves, which can be used to profile plane rotation...